Abstract
The efficiency of any electric vehicle (EV) is limited by the efficiency of its power electronic motor drive. Currently, EVs use conventional silicon (Si) insulated-gate bipolar transistor (IGBT) or Si metal-oxide-semiconductor field-effect transistor (MOSFET) technologies. Si technology prevents traction motor drives from exceeding the low switching frequencies (tens of kilohertz) due to excessive switching losses. This is important as the size of passive components (and thus cost) is inversely related to the switching frequency.
| Original language | American English |
|---|---|
| Journal | IEEE Electrification Magazine |
| Volume | 1 |
| DOIs | |
| State | Published - Dec 1 2013 |
Keywords
- Efficiency
- Electric Drives
- Electric Motors
- Electron Beam Lithography
- Electronic Motors
- Field Effect Transistors
- Insulated Gate Bipolar Transistors (IGBT)
- Low Switching Frequency
- MOS Devices
- MOSFET Devices
- Metals
- Oxide Semiconductors
- Power MOSFET
- Power Transistors
- Semiconducting Silicon
- Semiconductor Device Manufacture
- Si Technology
- Silicon
- Switching Frequency
- Switching Loss
- Traction Motor Drives
- Traction Motors
- Transistors
- Transportation Industry
- Wide Band gap Semiconductors
Disciplines
- Electrical and Computer Engineering
Fingerprint
Dive into the research topics of 'Wide-Bandgap Semiconductor Technology: Its Impact on the Electrification of the Transportation Industry'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS