Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes; Yu Hsin Kuo; Chengyang Zhang; Priyankka Ravikumar; Ranie Jeyakumar; Dyutimoy Chakraborty; Jiayi Chen; Taeyoung Song; Kai Ni; Woohyun Hwang; Kwangyou Seo; Suhwan Lim; Wanki Kim; Daewon Ha; Julia Medvedeva; Suman Datta; Shimeng Yu; Asif Khan

doi:10.1109/LED.2026.3699506

Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

Lance Fernandes
, Yu Hsin Kuo
, Chengyang Zhang
, Priyankka Ravikumar
, Ranie Jeyakumar
, Dyutimoy Chakraborty
, Jiayi Chen
, Taeyoung Song
, Kai Ni
, Woohyun Hwang
, Kwangyou Seo
, Suhwan Lim
, Wanki Kim
, Daewon Ha
, Julia Medvedeva
, Suman Datta
, Shimeng Yu
, Asif Khan

Georgia Institute of Technology
University of Notre Dame
Samsung

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	IEEE Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2026.3699506
State	Accepted/In press - 2026

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Ferroelectric
memory window
oxide channel
thermal stability

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10.1109/LED.2026.3699506

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Fernandes, L., Kuo, Y. H., Zhang, C., Ravikumar, P., Jeyakumar, R., Chakraborty, D., Chen, J., Song, T., Ni, K., Hwang, W., Seo, K., Lim, S., Kim, W., Ha, D., Medvedeva, J., Datta, S., Yu, S., & Khan, A. (Accepted/In press). Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors. IEEE Electron Device Letters. https://doi.org/10.1109/LED.2026.3699506

@article{c3ff3b2d8b704d76b0b306d90c270824,

title = "Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors",

keywords = "Ferroelectric, memory window, oxide channel, thermal stability",

author = "Lance Fernandes and Kuo, \{Yu Hsin\} and Chengyang Zhang and Priyankka Ravikumar and Ranie Jeyakumar and Dyutimoy Chakraborty and Jiayi Chen and Taeyoung Song and Kai Ni and Woohyun Hwang and Kwangyou Seo and Suhwan Lim and Wanki Kim and Daewon Ha and Julia Medvedeva and Suman Datta and Shimeng Yu and Asif Khan",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2026",

doi = "10.1109/LED.2026.3699506",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

}

TY - JOUR

T1 - Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

AU - Fernandes, Lance

AU - Kuo, Yu Hsin

AU - Zhang, Chengyang

AU - Ravikumar, Priyankka

AU - Jeyakumar, Ranie

AU - Chakraborty, Dyutimoy

AU - Chen, Jiayi

AU - Song, Taeyoung

AU - Ni, Kai

AU - Hwang, Woohyun

AU - Seo, Kwangyou

AU - Lim, Suhwan

AU - Kim, Wanki

AU - Ha, Daewon

AU - Medvedeva, Julia

AU - Datta, Suman

AU - Yu, Shimeng

AU - Khan, Asif

PY - 2026

Y1 - 2026

KW - Ferroelectric

KW - memory window

KW - oxide channel

KW - thermal stability

UR - https://www.scopus.com/pages/publications/105041023012

UR - https://www.scopus.com/pages/publications/105041023012#tab=citedBy

U2 - 10.1109/LED.2026.3699506

DO - 10.1109/LED.2026.3699506

M3 - Article

AN - SCOPUS:105041023012

SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors

ASJC Scopus Subject Areas

Keywords

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