The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE

M. J. Harlow; P. C. Spurdens; Randy Hays Moss

doi:10.1109/ICIPRM.1995.522146

The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE

M. J. Harlow
, P. C. Spurdens
, Randy Hays Moss

Missouri University of Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed

Original language	American English
Journal	Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, 1995
DOIs	https://doi.org/10.1109/ICIPRM.1995.522146
State	Published - Jan 1 1995

Keywords

AP-MOVPE Growth
Atmospheric Pressure MOVPE
Dielectric Masks
III-V Semiconductors
InP
Indium Compounds
Mesa Structures
PCl 3
PCl 3 Influence
Planar Regrowth
Polycrystalline Deposit Suppression
Regrowth Planarisation
Regrowth Selectivity
Scanning Electron Microscopy
Semiconductor Growth
Surface Structure
Vapour Phase Epitaxial Growth
[100] Direction Growth Suppression
[311] Direction Growth Enhancement

Disciplines

Electrical and Computer Engineering

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10.1109/ICIPRM.1995.522146License: Unspecified

The Influence of PCl 3 on Planarisation and Selectivity of InP ReFinal published version, 943 KBLicense: Unspecified

Cite this

@article{741791d2b917456f8cea7b6f0cb70e15,

title = "The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE",

abstract = " The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed",

keywords = "AP-MOVPE Growth, Atmospheric Pressure MOVPE, Dielectric Masks, III-V Semiconductors, InP, Indium Compounds, Mesa Structures, PCl 3, PCl 3 Influence, Planar Regrowth, Polycrystalline Deposit Suppression, Regrowth Planarisation, Regrowth Selectivity, Scanning Electron Microscopy, Semiconductor Growth, Surface Structure, Vapour Phase Epitaxial Growth, [100] Direction Growth Suppression, [311] Direction Growth Enhancement",

author = "Harlow, \{M. J.\} and Spurdens, \{P. C.\} and Moss, \{Randy Hays\}",

year = "1995",

month = jan,

day = "1",

doi = "10.1109/ICIPRM.1995.522146",

language = "American English",

journal = "Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, 1995",

}

TY - JOUR

T1 - The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE

AU - Harlow, M. J.

AU - Spurdens, P. C.

AU - Moss, Randy Hays

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed

AB - The introduction of phosphorus trichloride into the AP-MOVPE growth of InP has been found to dramatically improve the regrowth adjacent to mesa structures. By suppressing growth in the [100] direction and enhancing growth in the [311] directions planar regrowth is achieved. Polycrystalline deposits on dielectric masks can also be completely suppressed

KW - AP-MOVPE Growth

KW - Atmospheric Pressure MOVPE

KW - Dielectric Masks

KW - III-V Semiconductors

KW - InP

KW - Indium Compounds

KW - Mesa Structures

KW - PCl 3

KW - PCl 3 Influence

KW - Planar Regrowth

KW - Polycrystalline Deposit Suppression

KW - Regrowth Planarisation

KW - Regrowth Selectivity

KW - Scanning Electron Microscopy

KW - Semiconductor Growth

KW - Surface Structure

KW - Vapour Phase Epitaxial Growth

KW - [100] Direction Growth Suppression

KW - [311] Direction Growth Enhancement

UR - https://scholarsmine.mst.edu/ele_comeng_facwork/1296

U2 - 10.1109/ICIPRM.1995.522146

DO - 10.1109/ICIPRM.1995.522146

M3 - Article

JO - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, 1995

JF - Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, 1995

ER -

The Influence of PCl 3 on Planarisation and Selectivity of InP Regrowth by Atmospheric Pressure MOVPE

Abstract

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