The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride

P. D. Ownby; M. W. Barsoum; B. F. Yu; Harold V. Romero

The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride

P. D. Ownby
, M. W. Barsoum
, B. F. Yu
, Harold V. Romero

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979)
State	Published - Jan 1 1979

Disciplines

Materials Science and Engineering

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Ownby, P. D., Barsoum, M. W., Yu, B. F., & Romero, H. V. (1979). The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride. 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979).

The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride. / Ownby, P. D.; Barsoum, M. W.; Yu, B. F. et al.
In: 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979), 01.01.1979.

Research output: Contribution to journal › Article › peer-review

Ownby, PD, Barsoum, MW, Yu, BF & Romero, HV 1979, 'The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride', 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979).

Ownby PD, Barsoum MW, Yu BF, Romero HV. The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride. 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979). 1979 Jan 1.

Ownby, P. D. ; Barsoum, M. W. ; Yu, B. F. et al. / The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride. In: 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979). 1979.

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AU - Ownby, P. D.

AU - Barsoum, M. W.

AU - Yu, B. F.

AU - Romero, Harold V.

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JO - 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979)

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The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride

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