Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In2O3- x

Julia E. Medvedeva; I. A. Zhuravlev; C. Burris; D. B. Buchholz; M. Grayson; R. P. H. Chang

doi:10.1063/1.5144219

Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In₂O_{3- x}

Julia E. Medvedeva
, I. A. Zhuravlev
, C. Burris
, D. B. Buchholz
, M. Grayson
, R. P. H. Chang

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	175701
Journal	Journal of Applied Physics
Volume	127
Issue number	17
DOIs	https://doi.org/10.1063/1.5144219
State	Published - May 7 2020

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.5144219

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@article{db2ef42905f14683aa5f944bbd0d27a6,

title = "Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In2O3- x ",

author = "Medvedeva, \{Julia E.\} and Zhuravlev, \{I. A.\} and C. Burris and Buchholz, \{D. B.\} and M. Grayson and Chang, \{R. P. H.\}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = may,

day = "7",

doi = "10.1063/1.5144219",

language = "English",

volume = "127",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "17",

}

TY - JOUR

T1 - Origin of high carrier concentration in amorphous wide-bandgap oxides

T2 - Role of disorder in defect formation and electron localization in In2O3- x

AU - Medvedeva, Julia E.

AU - Zhuravlev, I. A.

AU - Burris, C.

AU - Buchholz, D. B.

AU - Grayson, M.

AU - Chang, R. P. H.

PY - 2020/5/7

Y1 - 2020/5/7

UR - https://www.scopus.com/pages/publications/85092091658

UR - https://www.scopus.com/pages/publications/85092091658#tab=citedBy

U2 - 10.1063/1.5144219

DO - 10.1063/1.5144219

M3 - Article

SN - 0021-8979

VL - 127

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 175701

ER -

Origin of high carrier concentration in amorphous wide-bandgap oxides: Role of disorder in defect formation and electron localization in In₂O_{3- x}

ASJC Scopus Subject Areas

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