Optically activated 4H-SiC p-i-n diodes for high-power applications

Feng Zhao; Mohammad M. Islam; Peter Muzykov; Alex Bolotnikov; Tangali S. Sudarshan

doi:10.1109/LED.2009.2031419

Optically activated 4H-SiC p-i-n diodes for high-power applications

Feng Zhao
, Mohammad M. Islam
, Peter Muzykov
, Alex Bolotnikov
, Tangali S. Sudarshan

University of South Carolina
General Electric

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1182-1184
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2031419
State	Published - 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Bistable switches
Optically activated
P-i-n diode
SiC

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10.1109/LED.2009.2031419

Cite this

@article{3479454581054446a39ccc4200897626,

title = "Optically activated 4H-SiC p-i-n diodes for high-power applications",

keywords = "Bistable switches, Optically activated, P-i-n diode, SiC",

author = "Feng Zhao and Islam, \{Mohammad M.\} and Peter Muzykov and Alex Bolotnikov and Sudarshan, \{Tangali S.\}",

year = "2009",

doi = "10.1109/LED.2009.2031419",

language = "English",

volume = "30",

pages = "1182--1184",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "11",

}

TY - JOUR

T1 - Optically activated 4H-SiC p-i-n diodes for high-power applications

AU - Zhao, Feng

AU - Islam, Mohammad M.

AU - Muzykov, Peter

AU - Bolotnikov, Alex

AU - Sudarshan, Tangali S.

PY - 2009

Y1 - 2009

KW - Bistable switches

KW - Optically activated

KW - P-i-n diode

KW - SiC

UR - https://www.scopus.com/pages/publications/70350612873

UR - https://www.scopus.com/pages/publications/70350612873#tab=citedBy

U2 - 10.1109/LED.2009.2031419

DO - 10.1109/LED.2009.2031419

M3 - Article

AN - SCOPUS:70350612873

SN - 0741-3106

VL - 30

SP - 1182

EP - 1184

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Optically activated 4H-SiC p-i-n diodes for high-power applications

ASJC Scopus Subject Areas

Keywords

Access to Document

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