Network Model of Electronic States of Thin Films, Solid Interfaces, and Planar Defects

Cheng-Hsiao Wu; Elliott W. Montroll

Network Model of Electronic States of Thin Films, Solid Interfaces, and Planar Defects

Cheng-Hsiao Wu
, Elliott W. Montroll

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Green's functions for a finite free boundary network are derived. Their application to models of solid interface and surface defects is made. The density of states with respect to localized electrons around interface or defect nodes is calculated. The density of states as a function of the thickness of a thin film is calculated. Periodic conditions as well as free surface boundaries are considered.

Original language	American English
Journal	Journal of Nonmetals and Semiconductors
Volume	2
State	Published - Oct 1 1975

Keywords

Crystals
Films

Disciplines

Electrical and Computer Engineering

Cite this

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title = "Network Model of Electronic States of Thin Films, Solid Interfaces, and Planar Defects",

abstract = " Green's functions for a finite free boundary network are derived. Their application to models of solid interface and surface defects is made. The density of states with respect to localized electrons around interface or defect nodes is calculated. The density of states as a function of the thickness of a thin film is calculated. Periodic conditions as well as free surface boundaries are considered.",

keywords = "Crystals, Films",

author = "Cheng-Hsiao Wu and Montroll, \{Elliott W.\}",

year = "1975",

month = oct,

day = "1",

language = "American English",

volume = "2",

journal = "Journal of Nonmetals and Semiconductors",

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TY - JOUR

T1 - Network Model of Electronic States of Thin Films, Solid Interfaces, and Planar Defects

AU - Wu, Cheng-Hsiao

AU - Montroll, Elliott W.

PY - 1975/10/1

Y1 - 1975/10/1

N2 - Green's functions for a finite free boundary network are derived. Their application to models of solid interface and surface defects is made. The density of states with respect to localized electrons around interface or defect nodes is calculated. The density of states as a function of the thickness of a thin film is calculated. Periodic conditions as well as free surface boundaries are considered.

AB - Green's functions for a finite free boundary network are derived. Their application to models of solid interface and surface defects is made. The density of states with respect to localized electrons around interface or defect nodes is calculated. The density of states as a function of the thickness of a thin film is calculated. Periodic conditions as well as free surface boundaries are considered.

KW - Crystals

KW - Films

UR - https://scholarsmine.mst.edu/ele_comeng_facwork/3352

M3 - Article

VL - 2

JO - Journal of Nonmetals and Semiconductors

JF - Journal of Nonmetals and Semiconductors

ER -

Network Model of Electronic States of Thin Films, Solid Interfaces, and Planar Defects

Abstract

Keywords

Disciplines

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