Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony

Monocrystalline dislocation-free silicon, having an antimony concentration of from 3 × 10 ¹⁸ to 9 × 10 ¹⁸ atoms per cm ³ , was investigated by Mössbauer spectrometry at 80°K using the 37.2 keV γ-ray of ¹²¹ Sb. A single line pattern was found, with a line width of 2.5 mm/sec and an isomer shift varying from 1.32 mm/sec to 0.68 mm/sec (referred to InSb) over the indicated range. The lattice parameter for material increased from 5.4304 ₅ Å to 5.4309 ₉ Å over the same range. The variation in isomer shift may be due to the lattice expansion.