Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant

Xiaodong Yang; M. J. Jurkovic; J. B. Heroux; W. I. Wang

doi:10.1049/el:19990763

Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant

Xiaodong Yang
, M. J. Jurkovic
, J. B. Heroux
, W. I. Wang

Mechanical and Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.

Original language	American English
Journal	Electronics Letters
DOIs	https://doi.org/10.1049/el:19990763
State	Published - Jan 1 1999

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Aerospace Engineering
Mechanical Engineering

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title = "Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant",

abstract = " Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.",

author = "Xiaodong Yang and Jurkovic, \{M. J.\} and Heroux, \{J. B.\} and Wang, \{W. I.\}",

year = "1999",

month = jan,

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doi = "10.1049/el:19990763",

language = "American English",

journal = "Electronics Letters",

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T1 - Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant

AU - Yang, Xiaodong

AU - Jurkovic, M. J.

AU - Heroux, J. B.

AU - Wang, W. I.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.

AB - Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.

UR - https://scholarsmine.mst.edu/mec_aereng_facwork/1100

UR - https://doi.org/10.1049/el:19990763

U2 - 10.1049/el:19990763

DO - 10.1049/el:19990763

M3 - Article

JO - Electronics Letters

JF - Electronics Letters

ER -

Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant

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