Improving the drive current of AlGaN/GaN HEMT using external strain engineering

Wei Chih Cheng; Siqi Lei; Wenmao Li; Feng Zhao; Mansun Chan; Hongyu Yu

doi:10.1109/EDTM.2019.8731108

Improving the drive current of AlGaN/GaN HEMT using external strain engineering

Wei Chih Cheng
, Siqi Lei
, Wenmao Li
, Feng Zhao
, Mansun Chan
, Hongyu Yu

Southern University of Science and Technology
Hong Kong University of Science and Technology
Washington State University Pullman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	374-376
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731108
State	Published - Mar 2019
Externally published	Yes
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: Mar 12 2019 → Mar 15 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	3/12/19 → 3/15/19

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Keywords

GaN
HEMT
Strain

Access to Document

10.1109/EDTM.2019.8731108

Cite this

Cheng, W. C., Lei, S., Li, W., Zhao, F., Chan, M., & Yu, H. (2019). Improving the drive current of AlGaN/GaN HEMT using external strain engineering. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 374-376). Article 8731108 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731108

Improving the drive current of AlGaN/GaN HEMT using external strain engineering. / Cheng, Wei Chih; Lei, Siqi; Li, Wenmao et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 374-376 8731108 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, WC, Lei, S, Li, W, Zhao, F, Chan, M & Yu, H 2019, Improving the drive current of AlGaN/GaN HEMT using external strain engineering. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731108, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 374-376, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 3/12/19. https://doi.org/10.1109/EDTM.2019.8731108

Cheng WC, Lei S, Li W, Zhao F, Chan M, Yu H. Improving the drive current of AlGaN/GaN HEMT using external strain engineering. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 374-376. 8731108. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731108

@inproceedings{a48d63c68baf42b99b3e87f6fdb89935,

title = "Improving the drive current of AlGaN/GaN HEMT using external strain engineering",

keywords = "GaN, HEMT, Strain",

author = "Cheng, \{Wei Chih\} and Siqi Lei and Wenmao Li and Feng Zhao and Mansun Chan and Hongyu Yu",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731108",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Lei, Siqi

AU - Li, Wenmao

AU - Zhao, Feng

AU - Chan, Mansun

AU - Yu, Hongyu

PY - 2019/3

Y1 - 2019/3

KW - GaN

KW - HEMT

KW - Strain

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U2 - 10.1109/EDTM.2019.8731108

DO - 10.1109/EDTM.2019.8731108

M3 - Conference contribution

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T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 374

EP - 376

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Improving the drive current of AlGaN/GaN HEMT using external strain engineering

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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