Abstract
Densification of Tantalum Carbide was studied by hot pressing at temperatures ranging from 1900 to 2400 C with and without sintering additives. Without sintering additives, the relative density increased from 75% at 1900 C to 96% at 2400C. a microstructural examination showed no observable grain growth up to 2300 C. Densification was enhanced with Carbon (C) and/or B4C additions. TaC with a 0.78 wt% C addition achieved a relative density of 97% at 2300C. Additions of 0.36 wt% B4C or 0.43 wt% B4C and 0.13 wt% C increased the relative density to 98% at 2200C, accompanied by rapid grain growth at 2100C and highertemperatures.
| Original language | American English |
|---|---|
| Pages (from-to) | 393-401 |
| Number of pages | 9 |
| Journal | Journal of the American Ceramic Society |
| Volume | 90 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jan 1 2007 |
Keywords
- Hot Pressing
- Sintering Aid
- Tantalum Carbide
Disciplines
- Materials Science and Engineering
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