Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model

Jun Z. Huang; Weng Cho Chew; Li (Lijun) Jun Jiang; Jie Peng; Chi Yung Yam; Guan Hua Chen

doi:10.1109/EDSSC.2013.6628164

Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model

Jun Z. Huang
, Weng Cho Chew
, Li (Lijun) Jun Jiang
, Jie Peng
, Chi Yung Yam
, Guan Hua Chen

Missouri University of Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. © 2013 IEEE.

Original language	American English
Journal	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628164
State	Published - Dec 23 2013

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Electrical and Computer Engineering

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title = "Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model",

abstract = " By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. {\textcopyright} 2013 IEEE.",

author = "Huang, \{Jun Z.\} and Chew, \{Weng Cho\} and Jiang, \{Li (Lijun) Jun\} and Jie Peng and Yam, \{Chi Yung\} and Chen, \{Guan Hua\}",

year = "2013",

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doi = "10.1109/EDSSC.2013.6628164",

language = "American English",

journal = "2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013",

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T1 - Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model

AU - Huang, Jun Z.

AU - Chew, Weng Cho

AU - Jiang, Li (Lijun) Jun

AU - Peng, Jie

AU - Yam, Chi Yung

AU - Chen, Guan Hua

PY - 2013/12/23

Y1 - 2013/12/23

N2 - By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. © 2013 IEEE.

AB - By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. © 2013 IEEE.

UR - https://scholarsmine.mst.edu/ele_comeng_facwork/5579

U2 - 10.1109/EDSSC.2013.6628164

DO - 10.1109/EDSSC.2013.6628164

M3 - Article

JO - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

JF - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

ER -

Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model

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