First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with fT/fMAX of 1/5.2 GHz

Feng Zhao; Ivan Perez-Wurfl; Chin Fang Huang; John Torvik; Bart Van Zeghbroeck

doi:10.1109/MWSYM.2005.1517145

First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f_T/f_MAX of 1/5.2 GHz

Feng Zhao
, Ivan Perez-Wurfl
, Chin Fang Huang
, John Torvik
, Bart Van Zeghbroeck

Microsemi Corporation
University of Colorado

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	2035-2038
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1517145
State	Published - 2005
Externally published	Yes
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: Jun 12 2005 → Jun 17 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	6/12/05 → 6/17/05

ASJC Scopus Subject Areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

4H-SiC, RF bJTs
F
G
L-band
Semi-insulating substrate
UHF

Access to Document

10.1109/MWSYM.2005.1517145

Cite this

Zhao, F., Perez-Wurfl, I., Huang, C. F., Torvik, J., & Van Zeghbroeck, B. (2005). First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f_T/f_MAX of 1/5.2 GHz. In 2005 IEEE MTT-S International Microwave Symposium Digest (pp. 2035-2038). Article 1517145 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005). https://doi.org/10.1109/MWSYM.2005.1517145

First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f_T/f_MAX of 1/5.2 GHz. / Zhao, Feng; Perez-Wurfl, Ivan; Huang, Chin Fang et al.
2005 IEEE MTT-S International Microwave Symposium Digest. 2005. p. 2035-2038 1517145 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, F, Perez-Wurfl, I, Huang, CF, Torvik, J & Van Zeghbroeck, B 2005, First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f_T/f_MAX of 1/5.2 GHz. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1517145, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 2035-2038, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 6/12/05. https://doi.org/10.1109/MWSYM.2005.1517145

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