Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure

Feng Zhao; Allen V. Lim

doi:10.1109/MEMSYS.2015.7050942

Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure

Feng Zhao
, Allen V. Lim

Washington State University Vancouver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	276-279
Number of pages	4
Edition	February
ISBN (Electronic)	9781479979554
DOIs	https://doi.org/10.1109/MEMSYS.2015.7050942
State	Published - Feb 26 2015
Externally published	Yes
Event	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 - Estoril, Portugal Duration: Jan 18 2015 → Jan 22 2015

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Number	February
Volume	2015-February
ISSN (Print)	1084-6999

Conference

Conference	2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015
Country/Territory	Portugal
City	Estoril
Period	1/18/15 → 1/22/15

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2015.7050942

Cite this

Zhao, F., & Lim, A. V. (2015). Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure. In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015 (February ed., pp. 276-279). Article 7050942 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2015.7050942

Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure. / Zhao, Feng; Lim, Allen V.
2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 276-279 7050942 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, F & Lim, AV 2015, Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure. in 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February edn, 7050942, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 276-279, 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015, Estoril, Portugal, 1/18/15. https://doi.org/10.1109/MEMSYS.2015.7050942

Zhao F, Lim AV. Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure. In 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 276-279. 7050942. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February). doi: 10.1109/MEMSYS.2015.7050942

Zhao, Feng ; Lim, Allen V. / Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure. 2015 28th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2015. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 276-279 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); February).

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Fabrication and characterization of single crystalline 4H-SiC MEMS devices with n-p-n homoepitaxial structure

Publication series

Conference

ASJC Scopus Subject Areas

Access to Document

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