Experimental Study of Counter-Doped Junction Termination Extension for 4H-SiC Power Devices

Jheng Yi Jiang; Hua Chih Hsu; Kuan Wei Chu; Chih Fang Huang; Feng Zhao

doi:10.1109/LED.2015.2428617

Experimental Study of Counter-Doped Junction Termination Extension for 4H-SiC Power Devices

Jheng Yi Jiang
, Hua Chih Hsu
, Kuan Wei Chu
, Chih Fang Huang
, Feng Zhao

National Tsing Hua University
Washington State University Vancouver

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	7098328
Pages (from-to)	699-701
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	7
DOIs	https://doi.org/10.1109/LED.2015.2428617
State	Published - Jul 1 2015
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

4H-SiC
breakdown voltage
counter-doped
junction termination extension

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10.1109/LED.2015.2428617

Cite this

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title = "Experimental Study of Counter-Doped Junction Termination Extension for 4H-SiC Power Devices",

keywords = "4H-SiC, breakdown voltage, counter-doped, junction termination extension",

author = "Jiang, \{Jheng Yi\} and Hsu, \{Hua Chih\} and Chu, \{Kuan Wei\} and Huang, \{Chih Fang\} and Feng Zhao",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/LED.2015.2428617",

language = "English",

volume = "36",

pages = "699--701",

journal = "IEEE Electron Device Letters",

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number = "7",

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TY - JOUR

T1 - Experimental Study of Counter-Doped Junction Termination Extension for 4H-SiC Power Devices

AU - Jiang, Jheng Yi

AU - Hsu, Hua Chih

AU - Chu, Kuan Wei

AU - Huang, Chih Fang

AU - Zhao, Feng

PY - 2015/7/1

Y1 - 2015/7/1

KW - 4H-SiC

KW - breakdown voltage

KW - counter-doped

KW - junction termination extension

UR - https://www.scopus.com/pages/publications/84934281491

UR - https://www.scopus.com/pages/publications/84934281491#tab=citedBy

U2 - 10.1109/LED.2015.2428617

DO - 10.1109/LED.2015.2428617

M3 - Article

AN - SCOPUS:84934281491

SN - 0741-3106

VL - 36

SP - 699

EP - 701

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7098328

ER -

Experimental Study of Counter-Doped Junction Termination Extension for 4H-SiC Power Devices

ASJC Scopus Subject Areas

Keywords

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