Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors

C. Cerny; R. Kaspi; D. Via; J. Ebel; G. DeSalvo; T. Quach; C. Bozada; R. Dettmer; J. Gillespie; T. Jenkins; C. Pettiford; F. Schuermeyer; R. Welch; M. O'Keefe; E. Stutz; al et al

Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors

C. Cerny
, R. Kaspi
, D. Via
, J. Ebel
, G. DeSalvo
, T. Quach
, C. Bozada
, R. Dettmer
, J. Gillespie
, T. Jenkins
, C. Pettiford
, F. Schuermeyer
, R. Welch
, M. O'Keefe
, E. Stutz
, al et al

Air Force Research Laboratory

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	127-130
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn Duration: May 11 1998 → May 15 1998

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Cerny, C., Kaspi, R., Via, D., Ebel, J., DeSalvo, G., Quach, T., Bozada, C., Dettmer, R., Gillespie, J., Jenkins, T., Pettiford, C., Schuermeyer, F., Welch, R., O'Keefe, M., Stutz, E., & et al, A. (1998). Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 127-130.

Cerny, C, Kaspi, R, Via, D, Ebel, J, DeSalvo, G, Quach, T, Bozada, C, Dettmer, R, Gillespie, J, Jenkins, T, Pettiford, C, Schuermeyer, F, Welch, R, O'Keefe, M, Stutz, E & et al, A 1998, 'Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors', Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 127-130.

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title = "Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors",

author = "C. Cerny and R. Kaspi and D. Via and J. Ebel and G. DeSalvo and T. Quach and C. Bozada and R. Dettmer and J. Gillespie and T. Jenkins and C. Pettiford and F. Schuermeyer and R. Welch and M. O'Keefe and E. Stutz and \{et al\}, al",

year = "1998",

language = "English",

pages = "127--130",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

note = "Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials ; Conference date: 11-05-1998 Through 15-05-1998",

}

TY - JOUR

T1 - Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors

AU - Cerny, C.

AU - Kaspi, R.

AU - Via, D.

AU - Ebel, J.

AU - DeSalvo, G.

AU - Quach, T.

AU - Bozada, C.

AU - Dettmer, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Pettiford, C.

AU - Schuermeyer, F.

AU - Welch, R.

AU - O'Keefe, M.

AU - Stutz, E.

AU - et al, al

PY - 1998

Y1 - 1998

UR - https://www.scopus.com/pages/publications/0032288021

UR - https://www.scopus.com/pages/publications/0032288021#tab=citedBy

M3 - Conference article

AN - SCOPUS:0032288021

SN - 1092-8669

SP - 127

EP - 130

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1998 International Conference on Indium Phosphide and Related Materials

Y2 - 11 May 1998 through 15 May 1998

ER -

Experimental development and incorporation of strain in P-type GaAsSb/InAlAs single metal heterostructure field effect transistors

ASJC Scopus Subject Areas

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