Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K

C. M. Aldao; Steven G. Anderson; C. Capasso; G. D. Waddill; I. M. Vitomirov; J. H. Weaver

doi:10.1103/PhysRevB.39.12977

Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K

C. M. Aldao
, Steven G. Anderson
, C. Capasso
, G. D. Waddill
, I. M. Vitomirov
, J. H. Weaver

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	12977-12980
Number of pages	4
Journal	Physical Review B
Volume	39
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.39.12977
State	Published - 1989
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics

Access to Document

10.1103/PhysRevB.39.12977

Cite this

@article{8155566ccc174a1d8861cfbe8ed638ae,

title = "Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K",

author = "Aldao, \{C. M.\} and Anderson, \{Steven G.\} and C. Capasso and Waddill, \{G. D.\} and Vitomirov, \{I. M.\} and Weaver, \{J. H.\}",

year = "1989",

doi = "10.1103/PhysRevB.39.12977",

language = "English",

volume = "39",

pages = "12977--12980",

journal = "Physical Review B",

issn = "0163-1829",

number = "17",

}

TY - JOUR

T1 - Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K

AU - Aldao, C. M.

AU - Anderson, Steven G.

AU - Capasso, C.

AU - Waddill, G. D.

AU - Vitomirov, I. M.

AU - Weaver, J. H.

PY - 1989

Y1 - 1989

UR - https://www.scopus.com/pages/publications/0041029980

UR - https://www.scopus.com/pages/publications/0041029980#tab=citedBy

U2 - 10.1103/PhysRevB.39.12977

DO - 10.1103/PhysRevB.39.12977

M3 - Article

AN - SCOPUS:0041029980

SN - 0163-1829

VL - 39

SP - 12977

EP - 12980

JO - Physical Review B

JF - Physical Review B

IS - 17

ER -

Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this