@article{ccf3a3cdf3ca4fc9b562b414c3c4cbaf,
title = "Demonstration of long-pulse power amplification at 1 GHz using 4H-SiC RF BJTs on a conductive substrate",
keywords = "4H-SiC, Bipolar junction transistors (BJTs), Conductive substrate, L-band, Long pulse, Output power, Power gain, Power-added efficiency (PAE), Radar, Radio frequency (RF)",
author = "Feng Zhao and \{Van Zeghbroeck\}, Bert and Kris Torvik and Tiefeng Shi and Mike Mallinger",
year = "2007",
month = may,
doi = "10.1109/LED.2007.895386",
language = "English",
volume = "28",
pages = "398--400",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "5",
}