Demonstration of 3500-V 4H-SiC lateral MOSFETs

Wen Shan Lee; Cheng Wei Lin; Ming Hsien Yang; Chih Fang Huang; Jeng Gong; Zhao Feng

doi:10.1109/LED.2010.2101041

Demonstration of 3500-V 4H-SiC lateral MOSFETs

Wen Shan Lee
, Cheng Wei Lin
, Ming Hsien Yang
, Chih Fang Huang
, Jeng Gong
, Zhao Feng

National Tsing Hua University
Tunghai University
University of South Carolina

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	5706340
Pages (from-to)	360-362
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2101041
State	Published - Mar 2011
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

4H-SiC
High-voltage
lateral
MOSFET
reduced surface field (RESURF)
semi-insulating substrate

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10.1109/LED.2010.2101041

Cite this

@article{316fe4a86d0f4ecebdeab5e38be2bdd1,

title = "Demonstration of 3500-V 4H-SiC lateral MOSFETs",

keywords = "4H-SiC, High-voltage, lateral, MOSFET, reduced surface field (RESURF), semi-insulating substrate",

author = "Lee, \{Wen Shan\} and Lin, \{Cheng Wei\} and Yang, \{Ming Hsien\} and Huang, \{Chih Fang\} and Jeng Gong and Zhao Feng",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2101041",

language = "English",

volume = "32",

pages = "360--362",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "3",

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TY - JOUR

T1 - Demonstration of 3500-V 4H-SiC lateral MOSFETs

AU - Lee, Wen Shan

AU - Lin, Cheng Wei

AU - Yang, Ming Hsien

AU - Huang, Chih Fang

AU - Gong, Jeng

AU - Feng, Zhao

PY - 2011/3

Y1 - 2011/3

KW - 4H-SiC

KW - High-voltage

KW - lateral

KW - MOSFET

KW - reduced surface field (RESURF)

KW - semi-insulating substrate

UR - https://www.scopus.com/pages/publications/79951953228

UR - https://www.scopus.com/pages/publications/79951953228#tab=citedBy

U2 - 10.1109/LED.2010.2101041

DO - 10.1109/LED.2010.2101041

M3 - Article

AN - SCOPUS:79951953228

SN - 0741-3106

VL - 32

SP - 360

EP - 362

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5706340

ER -

Demonstration of 3500-V 4H-SiC lateral MOSFETs

ASJC Scopus Subject Areas

Keywords

Access to Document

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