Current status and future prospects of 4H-SiC power RF bipolar junction transistors

Feng Zhao

doi:10.1109/ICIEA.2009.5138564

Current status and future prospects of 4H-SiC power RF bipolar junction transistors

Feng Zhao

University of South Carolina

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Pages	2060-2064
Number of pages	5
DOIs	https://doi.org/10.1109/ICIEA.2009.5138564
State	Published - 2009
Externally published	Yes
Event	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009 - Xi'an, China Duration: May 25 2009 → May 27 2009

Publication series

Name	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Conference

Conference	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Country/Territory	China
City	Xi'an
Period	5/25/09 → 5/27/09

ASJC Scopus Subject Areas

Artificial Intelligence
Computer Networks and Communications
Control and Systems Engineering
Electrical and Electronic Engineering

Keywords

BJT's
L-band
Radar
RF
S-band
SIC
UHF

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10.1109/ICIEA.2009.5138564

Cite this

Current status and future prospects of 4H-SiC power RF bipolar junction transistors. / Zhao, Feng.
2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009. 2009. p. 2060-2064 5138564 (2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, F 2009, Current status and future prospects of 4H-SiC power RF bipolar junction transistors. in 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009., 5138564, 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009, pp. 2060-2064, 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009, Xi'an, China, 5/25/09. https://doi.org/10.1109/ICIEA.2009.5138564

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year = "2009",

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KW - S-band

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KW - UHF

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Current status and future prospects of 4H-SiC power RF bipolar junction transistors

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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