Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells

T.-P. Lu; S.-T. Li; K. Zhang; C. Liu; G.-W. Xiao; Y.-G. Zhou; S.-W. Zheng; Y.-A. Yin; L.-J. Wu; H.-L. Wang; Xiaodong Yang

doi:10.1088/1674-1056/20/10/108504

Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells

T.-P. Lu
, S.-T. Li
, K. Zhang
, C. Liu
, G.-W. Xiao
, Y.-G. Zhou
, S.-W. Zheng
, Y.-A. Yin
, L.-J. Wu
, H.-L. Wang
, Xiaodong Yang

Mechanical and Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

Original language	American English
Journal	Chinese Physics B
DOIs	https://doi.org/10.1088/1674-1056/20/10/108504
State	Published - Jan 1 2011

Keywords

Dip-Shaped Quantum Wells
GaN-Based Light-Emitting Diodes

Disciplines

Aerospace Engineering
Mechanical Engineering

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https://doi.org/10.1088/1674-1056/20/10/108504

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@article{f3c615889f8b40869ff5d7cafed06814,

title = "Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells",

abstract = " InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). {\textcopyright} 2011 Chinese Physical Society and IOP Publishing Ltd.",

keywords = "Dip-Shaped Quantum Wells, GaN-Based Light-Emitting Diodes",

author = "T.-P. Lu and S.-T. Li and K. Zhang and C. Liu and G.-W. Xiao and Y.-G. Zhou and S.-W. Zheng and Y.-A. Yin and L.-J. Wu and H.-L. Wang and Xiaodong Yang",

year = "2011",

month = jan,

day = "1",

doi = "10.1088/1674-1056/20/10/108504",

language = "American English",

journal = "Chinese Physics B",

}

TY - JOUR

T1 - Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells

AU - Lu, T.-P.

AU - Li, S.-T.

AU - Zhang, K.

AU - Liu, C.

AU - Xiao, G.-W.

AU - Zhou, Y.-G.

AU - Zheng, S.-W.

AU - Yin, Y.-A.

AU - Wu, L.-J.

AU - Wang, H.-L.

AU - Yang, Xiaodong

PY - 2011/1/1

Y1 - 2011/1/1

N2 - InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

AB - InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

KW - Dip-Shaped Quantum Wells

KW - GaN-Based Light-Emitting Diodes

UR - https://scholarsmine.mst.edu/mec_aereng_facwork/590

UR - https://doi.org/10.1088/1674-1056/20/10/108504

U2 - 10.1088/1674-1056/20/10/108504

DO - 10.1088/1674-1056/20/10/108504

M3 - Article

JO - Chinese Physics B

JF - Chinese Physics B

ER -

Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells

Abstract

Keywords

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