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Analysis of transit times and minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors

  • Feng Zhao
  • , Ivan Perez
  • , Chih Fang Huang
  • , John Torvik
  • , Bart Van Zeghbroeck
  • Microsemi Corporation
  • University of Colorado

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2541-2545
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume52
Issue number12
DOIs
StatePublished - Dec 2005
Externally publishedYes

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • 4H-SiC
  • Bipolar junction transistors (BJTs)
  • Minority carrier mobility
  • Transit frequency
  • Transit time

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