Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses

Jianfeng Xu; Wen-Yan Yin; Jun-Fa Mao; Le-Wei Li; James L. Drewniak

doi:10.1109/ICMMT.2008.4540713

Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses

Jianfeng Xu
, Wen-Yan Yin
, Jun-Fa Mao
, Le-Wei Li
, James L. Drewniak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

Original language	American English
Journal	Proceedings of the International Conference on Microwave and Millimeter Wave Technology (2008, Nanjing, China)
Volume	3
DOIs	https://doi.org/10.1109/ICMMT.2008.4540713
State	Published - Apr 1 2008

Keywords

Breakdown
Computer Networks
Conjugate Gradient Method
Electromagnetic Pulse
Electromagnetic Waves
FEM
Field Effect Transistors
GaAs Field-Effect Transistors (FETs)
Gallium Alloys
Gradient Methods
High-Power Electromagnetic Pulse (HP-EMP)
MESFET Devices
Materials Science
Microwaves
Millimeter Wave Devices
Millimeter Waves
Millimeter-Wave Technologies
Nuclear Explosions
Semiconducting Gallium
Transistors

Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/ICMMT.2008.4540713License: Unspecified

https://doi.org/10.1109/ICMMT.2008.4540713

Cite this

@article{135eb5ef37be487ca04396b2effa7d2d,

title = "Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses",

abstract = " In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.",

keywords = "Breakdown, Computer Networks, Conjugate Gradient Method, Electromagnetic Pulse, Electromagnetic Waves, FEM, Field Effect Transistors, GaAs Field-Effect Transistors (FETs), Gallium Alloys, Gradient Methods, High-Power Electromagnetic Pulse (HP-EMP), MESFET Devices, Materials Science, Microwaves, Millimeter Wave Devices, Millimeter Waves, Millimeter-Wave Technologies, Nuclear Explosions, Semiconducting Gallium, Transistors",

author = "Jianfeng Xu and Wen-Yan Yin and Jun-Fa Mao and Le-Wei Li and Drewniak, \{James L.\}",

year = "2008",

month = apr,

day = "1",

doi = "10.1109/ICMMT.2008.4540713",

language = "American English",

volume = "3",

journal = "Proceedings of the International Conference on Microwave and Millimeter Wave Technology (2008, Nanjing, China)",

}

TY - JOUR

T1 - Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses

AU - Xu, Jianfeng

AU - Yin, Wen-Yan

AU - Mao, Jun-Fa

AU - Li, Le-Wei

AU - Drewniak, James L.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

AB - In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

KW - Breakdown

KW - Computer Networks

KW - Conjugate Gradient Method

KW - Electromagnetic Pulse

KW - Electromagnetic Waves

KW - FEM

KW - Field Effect Transistors

KW - GaAs Field-Effect Transistors (FETs)

KW - Gallium Alloys

KW - Gradient Methods

KW - High-Power Electromagnetic Pulse (HP-EMP)

KW - MESFET Devices

KW - Materials Science

KW - Microwaves

KW - Millimeter Wave Devices

KW - Millimeter Waves

KW - Millimeter-Wave Technologies

KW - Nuclear Explosions

KW - Semiconducting Gallium

KW - Transistors

UR - https://scholarsmine.mst.edu/ele_comeng_facwork/2711

UR - https://doi.org/10.1109/ICMMT.2008.4540713

U2 - 10.1109/ICMMT.2008.4540713

DO - 10.1109/ICMMT.2008.4540713

M3 - Article

VL - 3

JO - Proceedings of the International Conference on Microwave and Millimeter Wave Technology (2008, Nanjing, China)

JF - Proceedings of the International Conference on Microwave and Millimeter Wave Technology (2008, Nanjing, China)

ER -

Analysis of the Thermal Effects of GaAs FETs under the High-Power Electromagnetic Pulses

Abstract

Keywords

Disciplines

Access to Document

Other files and links

Fingerprint

Cite this