Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Xiaodong Yang; K. Maitra; C. Yeh; P. Zeitzoff; M. Raymond; P. Kulkarni; M. Wang; T. Yamashita; V. S. Basker; T. E. Standaert; S. Samavedam

doi:10.1109/SOI.2011.6081799

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Xiaodong Yang
, K. Maitra
, C. Yeh
, P. Zeitzoff
, M. Raymond
, P. Kulkarni
, M. Wang
, T. Yamashita
, V. S. Basker
, T. E. Standaert
, S. Samavedam

Mechanical and Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.

Original language	American English
Journal	Proceedings - IEEE International SOI Conference
DOIs	https://doi.org/10.1109/SOI.2011.6081799
State	Published - Jan 1 2011

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Aerospace Engineering
Mechanical Engineering

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https://doi.org/10.1109/SOI.2011.6081799

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title = "Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths",

abstract = " A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. {\textcopyright} 2011 IEEE.",

author = "Xiaodong Yang and K. Maitra and C. Yeh and P. Zeitzoff and M. Raymond and P. Kulkarni and M. Wang and T. Yamashita and Basker, \{V. S.\} and Standaert, \{T. E.\} and S. Samavedam",

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doi = "10.1109/SOI.2011.6081799",

language = "American English",

journal = "Proceedings - IEEE International SOI Conference",

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TY - JOUR

T1 - Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

AU - Yang, Xiaodong

AU - Maitra, K.

AU - Yeh, C.

AU - Zeitzoff, P.

AU - Raymond, M.

AU - Kulkarni, P.

AU - Wang, M.

AU - Yamashita, T.

AU - Basker, V. S.

AU - Standaert, T. E.

AU - Samavedam, S.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.

AB - A significant increase in parasitic resistance (R PARA) fluctuation is observed when S/D length is getting smaller than the characteristic length (L TRANS). Resistance change evaluated on double gate finFETs with various fin lengths shows an excellent agreement between the experimental data and the analytical model. Further R PARA fluctuation improvement can be realized by optimizing the L TRANS. © 2011 IEEE.

UR - https://scholarsmine.mst.edu/mec_aereng_facwork/589

UR - https://doi.org/10.1109/SOI.2011.6081799

U2 - 10.1109/SOI.2011.6081799

DO - 10.1109/SOI.2011.6081799

M3 - Article

JO - Proceedings - IEEE International SOI Conference

JF - Proceedings - IEEE International SOI Conference

ER -

Analysis of Parasitic Resistance in Double Gate FinFETs with Different Fin Lengths

Abstract

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