Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer

Taiping Lu; Shuti Li; Chao Liu; Kang Zhang; Yiqin Xu; Jinhui Tong; Lejuan Wu; Hailong Wang; Xiaodong Yang; Yian Yin; Guowei Xiao; Yugang Zhou

doi:10.1063/1.3700722

Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer

Taiping Lu
, Shuti Li
, Chao Liu
, Kang Zhang
, Yiqin Xu
, Jinhui Tong
, Lejuan Wu
, Hailong Wang
, Xiaodong Yang
, Yian Yin
, Guowei Xiao
, Yugang Zhou

Mechanical and Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.

Original language	American English
Journal	Applied Physics Letters
Volume	100
DOIs	https://doi.org/10.1063/1.3700722
State	Published - Mar 1 2012

Disciplines

Mechanical Engineering

Access to Document

10.1063/1.3700722License: Unspecified

Advantages of GaN Based Light-Emitting Diodes with a P-InGaN HoleFinal published version, 631 KBLicense: Unspecified

Cite this

@article{e23f089bfcf440af8768f50821f358c3,

title = "Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer",

abstract = " A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.",

author = "Taiping Lu and Shuti Li and Chao Liu and Kang Zhang and Yiqin Xu and Jinhui Tong and Lejuan Wu and Hailong Wang and Xiaodong Yang and Yian Yin and Guowei Xiao and Yugang Zhou",

year = "2012",

month = mar,

day = "1",

doi = "10.1063/1.3700722",

language = "American English",

volume = "100",

journal = "Applied Physics Letters",

}

TY - JOUR

T1 - Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer

AU - Lu, Taiping

AU - Li, Shuti

AU - Liu, Chao

AU - Zhang, Kang

AU - Xu, Yiqin

AU - Tong, Jinhui

AU - Wu, Lejuan

AU - Wang, Hailong

AU - Yang, Xiaodong

AU - Yin, Yian

AU - Xiao, Guowei

AU - Zhou, Yugang

PY - 2012/3/1

Y1 - 2012/3/1

N2 - A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.

AB - A p-type InGaN hole reservoir layer (HRL) was designed and incorporated in GaN based light-emitting diodes (LEDs) to enhance hole injection efficiency and alleviate efficiency droop. The fabricated LEDs with p-type HRL exhibited higher light output power, smaller emission energy shift and broadening as compared to its counterpart. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the alleviated band bending in the last couple of quantum well and electron blocking layer, and thus better hole injection efficiency. Meanwhile, the efficiency droop can be effectively mitigated when the p-InGaN HRL was used.

UR - https://scholarsmine.mst.edu/mec_aereng_facwork/588

U2 - 10.1063/1.3700722

DO - 10.1063/1.3700722

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Advantages of GaN Based Light-Emitting Diodes with a P-InGaN Hole Reservoir Layer

Abstract

Disciplines

Access to Document

Other files and links

Fingerprint

Cite this