Abstract
We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.
| Original language | American English |
|---|---|
| Journal | IEEE Transactions on Electron Devices |
| DOIs | |
| State | Published - Jan 1 1998 |
Keywords
- Amorphous Semiconductors
- Cl-Si:H
- Double Amorphous Silicon Stacked Active Layer
- Elemental Semiconductors
- Leakage Currents
- Off-State Photo-Leakage Current
- Si:H
- Silicon
- Thin Film Transistor
- Thin Film Transistors
Disciplines
- Biology
- Electrical and Computer Engineering
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