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A Novel Thin Film Transistor Using Double Amorphous Silicon Active Layer

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated a novel low off-state leakage current thin-film transistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H(:Cl)] and amorphous silicon (a-Si:H) stacked active layer, in which conduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensitive material. The off-state photo-leakage current of the a-Si:H(:Cl)/a-Si:H TFT is much lower than that a conventional a-Si:H TFT.

Original languageAmerican English
JournalIEEE Transactions on Electron Devices
DOIs
StatePublished - Jan 1 1998

Keywords

  • Amorphous Semiconductors
  • Cl-Si:H
  • Double Amorphous Silicon Stacked Active Layer
  • Elemental Semiconductors
  • Leakage Currents
  • Off-State Photo-Leakage Current
  • Si:H
  • Silicon
  • Thin Film Transistor
  • Thin Film Transistors

Disciplines

  • Biology
  • Electrical and Computer Engineering

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