A Novel Deep Junction Edge Termination for Superjunction MOSFETs

Chia Hui Cheng; Chih Fang Huang; Kung Yen Lee; Feng Zhao

doi:10.1109/LED.2018.2803199

A Novel Deep Junction Edge Termination for Superjunction MOSFETs

Chia Hui Cheng
, Chih Fang Huang
, Kung Yen Lee
, Feng Zhao

National Tsing Hua University
National Taiwan University
Washington State University Vancouver

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	544-547
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	4
DOIs	https://doi.org/10.1109/LED.2018.2803199
State	Published - Apr 2018
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

deep junction
edge termination
MOSFET
Superjunction

Access to Document

10.1109/LED.2018.2803199

Cite this

@article{33659b5a52784bcab958f0d39ed1e653,

title = "A Novel Deep Junction Edge Termination for Superjunction MOSFETs",

keywords = "deep junction, edge termination, MOSFET, Superjunction",

author = "Cheng, \{Chia Hui\} and Huang, \{Chih Fang\} and Lee, \{Kung Yen\} and Feng Zhao",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = apr,

doi = "10.1109/LED.2018.2803199",

language = "English",

volume = "39",

pages = "544--547",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "4",

}

TY - JOUR

T1 - A Novel Deep Junction Edge Termination for Superjunction MOSFETs

AU - Cheng, Chia Hui

AU - Huang, Chih Fang

AU - Lee, Kung Yen

AU - Zhao, Feng

PY - 2018/4

Y1 - 2018/4

KW - deep junction

KW - edge termination

KW - MOSFET

KW - Superjunction

UR - https://www.scopus.com/pages/publications/85041546790

UR - https://www.scopus.com/pages/publications/85041546790#tab=citedBy

U2 - 10.1109/LED.2018.2803199

DO - 10.1109/LED.2018.2803199

M3 - Article

AN - SCOPUS:85041546790

SN - 0741-3106

VL - 39

SP - 544

EP - 547

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

A Novel Deep Junction Edge Termination for Superjunction MOSFETs

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this