71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications

Feng Zhao

doi:10.1016/j.sse.2009.07.008

71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications

Feng Zhao

University of South Carolina

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1169-1172
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	11
DOIs	https://doi.org/10.1016/j.sse.2009.07.008
State	Published - Jun 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

4H-SiC
Bipolar junction transistors (BJTs)
Long pulse
Radar
UHF

Access to Document

10.1016/j.sse.2009.07.008

Cite this

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title = "71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications",

keywords = "4H-SiC, Bipolar junction transistors (BJTs), Long pulse, Radar, UHF",

author = "Feng Zhao",

year = "2009",

month = jun,

doi = "10.1016/j.sse.2009.07.008",

language = "English",

volume = "53",

pages = "1169--1172",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "11",

}

TY - JOUR

T1 - 71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications

AU - Zhao, Feng

PY - 2009/6

Y1 - 2009/6

KW - 4H-SiC

KW - Bipolar junction transistors (BJTs)

KW - Long pulse

KW - Radar

KW - UHF

UR - https://www.scopus.com/pages/publications/72049121464

UR - https://www.scopus.com/pages/publications/72049121464#tab=citedBy

U2 - 10.1016/j.sse.2009.07.008

DO - 10.1016/j.sse.2009.07.008

M3 - Article

AN - SCOPUS:72049121464

SN - 0038-1101

VL - 53

SP - 1169

EP - 1172

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications

ASJC Scopus Subject Areas

Keywords

Access to Document

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