New Science Findings from National Tsing Hua University (NTHU) Reported (Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing)

Media coverage

• Title	New Science Findings from National Tsing Hua University (NTHU) Reported (Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing)
  Media name/outlet	Taiwan Daily Report
  Country/Territory	United States
  Date	4/13/26
  Persons	Feng Zhao